Slt integrated circuit capacitor structure and methods

ABSTRACT

FET IC structures that enable formation of integrated capacitors in a “flipped” SOI IC structure made using a back-side access process, such as a “single layer transfer” (SLT) process, and which eliminate or mitigate unwanted parasitic couplings to a handle wafer. In some embodiments, a conductive interconnect layer may be patterned, pre-SLT, to form an isolated first capacitor plate. In other embodiments, pre-SLT, a conductive region of the active layer of an IC may be patterned to form an isolated first capacitor plate, with one or more interconnect layers being fabricated in position to form an electrical contact to the first capacitor plate. In either case, a post-SLT top-side layer of conductive material may be patterned to form a second capacitor plate. Couplings to the resulting capacitor structures include only external connections, only internal connections, or both internal and external connections

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application may be related to the following patents andpatent applications, the contents of all of which are incorporatedherein by reference:

-   -   Co-pending U.S. patent application Ser. No. 15/920,321, filed        Mar. 13, 2018, entitled “Semiconductor-on-Insulator Transistor        with Improved Breakdown Characteristics”;    -   Co-pending U.S. patent application Ser. No. 16/040,295, filed        Jul. 19, 2018, Attorney Docket No. PER-251-PAP, entitled        “Thermal Extraction of Single Layer Transfer Integrated        Circuits”; and    -   Co-pending U.S. patent application Ser. No. ______, filed Jul.        19, 2018, Attorney Docket No. PER-264-PAP, entitled “High-Q        Integrated Circuit Inductor Structure and Methods”.

BACKGROUND (1) Technical Field

This invention relates to electronic integrated circuits, and moreparticularly to electronic integrated circuits having transistorsfabricated with semiconductor-on-insulator technology.

(2) Background

Virtually all modern electronic products—including laptop computers,mobile telephones, and electric cars—utilize complementary metal oxidesemiconductor (CMOS) transistor integrated circuits (ICs), and in manycases CMOS ICs fabricated using a semiconductor-on-insulator process,such as silicon-on-insulator (SOI) or germanium-on-insulator. SOItransistors in which the electrical insulator is aluminum oxide (i.e.,sapphire) are called silicon-on-sapphire or “SOS” devices. Anotherexample of a semiconductor-on-insulator technology is“silicon-on-glass”, and other examples are known to those of ordinaryskill in the art.

Taking SOI as one example of semiconductor-on-insulator, SOI technologyencompasses the use of a layered silicon-insulator-silicon substrate inplace of conventional “bulk” silicon substrates in semiconductormanufacturing. More specifically, SOI transistors are generallyfabricated on a layer of silicon dioxide, SiO₂ (often called a “buriedoxide” or “BOX” layer) formed on a bulk silicon substrate. The BOX layerreduces certain parasitic effects typical of bulk silicon CMOSprocesses, thereby improving performance. SOI-based devices thus differfrom conventional bulk silicon devices in that the silicon regions ofthe CMOS transistors are fabricated on an electrical insulator(typically silicon dioxide or aluminum oxide) rather than on a bulksilicon substrate.

As a specific example of a semiconductor-on-insulator process forfabricating ICs, FIG. 1 is a stylized cross-sectional view of a typicalprior art SOI IC structure 100 for a single metal-oxide-semiconductor(MOS) field effect transistor (FET), or MOSFET. The SOI structure 100includes a substrate 102, a buried-oxide (BOX) insulator layer 104, andan active layer 106 (note that the dimensions for the elements of theSOI IC structure 100 are not to scale; some dimensions have beenexaggerated for clarity or emphasis). The substrate 102 is typically asemiconductor material such as silicon. The BOX layer 104 is adielectric, and is often SiO₂ formed as a “top” surface 102T of thesilicon substrate 102, such as by oxidation, layer transfer, orimplantation. The active layer 106 may include some combination ofimplants and/or layers that include dopants, dielectrics, polysilicon,metal wiring, passivation, and other materials to form active and/orpassive electronic components and/or mechanical structures. For example,in the illustrated embodiment, a FET (encircled by a dashed oval 108) isshown, with the FET 108 comprising a source S, a drain D, and a primarygate G atop an insulating gate oxide (GOX) layer 110. A body B isdefined below the primary gate G, between the source S and the drain D.In operation, a “conduction channel” (for an enhancement mode FET) or an“inversion channel” (for a depletion mode FET) is generated within thebody B between the source S and the drain D and proximate the GOX layer110 (e.g., within about the top 100A of the body B). A body contact (notshown), which generally comprises a region with the same doping as thebody B, may be resistively coupled to the body B through an extension ofthe semiconductor island typically extending in the width direction ofthe transistor (in FIG. 1, that would be in/out of the plane of theimage) to provide a fourth terminal to the FET 108. As is known, thebody contact is commonly coupled to a bias node such as a power supply,to circuit ground, or to the source S (although other connection nodesare possible). If an SOI transistor has a body contact, it is known asbody-contacted transistor, otherwise it is known as a floating-bodytransistor.

If the source S and drain D are highly doped with N type material, theFET is an N-type FET, or NMOS device. Conversely, if the source S anddrain D are highly doped with P type material, the FET is a P-type FET,or PMOS device. Thus, the source S and drain D doping type determineswhether a FET is an N-type or a P-type. CMOS devices comprise N-type andP-type FETs co-fabricated on a single IC die, in known fashion. The gateG is typically formed from polysilicon.

The BOX layer 104, the active layer 106, and one or more FETs 108 may becollectively referred to as a “device region” 114 for convenience(noting that other structures or regions may intrude into the deviceregion 114 in particular IC designs). A superstructure 112 of variouselements, regions, and structures may be fabricated in known fashion onor above the device region 114 in order to implement particularlyfunctionality. The superstructure 112 may include, for example,conductive interconnections from the FET 108 to other components(including other FETs) and/or external contacts, passivation layers andregions, and protective coatings. The conductive interconnections maybe, for example, copper or other suitable metal or electricallyconductive material. Other elements, regions, and structures may beincluded for particular circuit designs. The formation of various layerscreates a physical coupling between adjacent layers, which may includebonds at the atomic or molecular level and/or merging of layers (e.g.,by implantation of dopants or the like).

As should be appreciated by one of ordinary skill in the art, a singleIC die may embody from one electronic component—such as FET 108—tomillions of electronic components. Further, the various elements of thesuperstructure 112 may extend in three-dimensions and have quite complexshapes. In general, the details of the superstructure 112 will vary fromIC design to IC design.

The BOX layer 104, while enabling many beneficial characteristics forSOI IC's, also introduces some problems, such as capacitive coupling tothe substrate 102, a thermal barrier to heat flow, and a voltagebreakdown path to the substrate 102. Capacitive coupling with thesubstrate 102 alone can cause numerous side effects compared to an idealSOI transistor, such as increased leakage current, lower breakdownvoltage, signal cross-coupling, and linearity degradation. However, themost serious capacitive coupling effect caused by the BOX layer 104 isoften the “back-channel” effect.

Referring back to FIG. 1, the structure of a secondary parasiticback-channel FET (shown in a dashed square 120) is formed by the sourceS, the drain D, the BOX layer 104 (functioning as a gate insulator), andthe substrate 102 (effectively functioning as a secondary gate).Accordingly, the secondary parasitic back-channel FET 120 is coupled inparallel with the primary FET 108. Notably, the voltages and chargeaccumulations in and around the secondary gate (i.e., the substrate 102)may vary and in general are not well controlled. As is widely known, thepresence of the secondary parasitic back-channel FET 120 adjacent theFET 108 can place the bottom of the FET 108 in uncontrolled states,often in a subthreshold leakage regime, which in turn may createuncontrollable source-drain leakage currents.

It is possible to mitigate some of the side effects of the secondaryparasitic back-channel FET 120. One known mitigating technique utilizes“single layer transfer”, or SLT, as part of the IC fabrication process.The SLT process essentially flips or inverts an entire SOI transistorstructure upside down onto a “handle wafer”, with the original substrate(e.g., substrate 102 in FIG. 1) then being removed, thereby eliminatingthe substrate 102. For example, FIG. 2 is a stylized cross-sectionalview of a typical prior art SOI IC structure 100 for a single FET,fabricated using an SLT process. Essentially, after most or all of thesuperstructure 112 of FIG. 1 is completed, a first passivation layer 202(e.g., SiO₂) is generally applied on top of the superstructure 112, andthen the original substrate 102 and the layers denoted as “X” in FIG. 1are flipped over and attached or bonded in known fashion to a handlewafer 204, as shown in FIG. 2. The handle wafer 204 is typically siliconwith a bonding layer of SiO₂ (e.g., thermally grown oxide) on thesurface facing the first passivation layer 202. Thereafter, the originalsubstrate 102 is removed (e.g., by mechanical and/or chemical means),thus exposing the BOX layer 104. A non-conductive second passivationlayer 206, which may be a conventional interlayer dielectric (ILD)material, may be formed on the exposed BOX layer 104.

In the structure of FIG. 2, the device region 114 is inverted withrespect to the device region in FIG. 1. Thus, the portions of the FET108 formerly closest to the original substrate 102 are now found nearthe “new top” of the IC structure, farthest away from the handle wafer204. Conversely, those portions of the FET 108 formerly farthest awayfrom the original substrate 102 are now found in the interior of the ICstructure, situated closest to the handle wafer 204. Consequently, thegate G (and thus connections to the gate) of the FET 108 is now orientedtowards the handle wafer 204, and the BOX layer 104 in the structure ofFIGS. 1A and 1B—previously adjacent to the original substrate 102—is nowvery close to the “new top” of the IC structure.

Although not exactly to scale, the BOX layer 104 in FIG. 1 exhibitsrelatively high capacitive coupling to the original substrate 102,causing the above-mentioned side effects. Referring to FIG. 2, while theBOX layer 104 is still present with the inverted IC structure, the“backside” of the FET 108 is now near the “new top” of the IC structure,but with no adjacent semiconductive “backside gate” material (i.e., theoriginal substrate 102).

FIG. 3 is a stylized cross-sectional view of a SOI IC structure 300 fora single FET made using a back-side access process as taught inco-pending U.S. patent application Ser. No. 15/920,321, referencedabove. In this example, the superstructure 112 is shown in greaterdetail, and includes conductive (e.g., metal) interconnect levels M1(closest to the FET 108), M2, M3, M4, and M5 (also known as the “topmetal”), which are separated in places by insulating and/or passivationlayers or regions (generally indicated as “oxide”, but other materialsmay be used). As is known in the art, the various layers of thesuperstructure 112 are generally sequentially formed, and more or fewerthan five interconnect levels may be used. Interconnections between theinterconnect layers may be made by one or more vertical conductive vias310 or the like, in known fashion (not all of the vias 310 are labeled,to avoid clutter).

A contact 302 is made to the gate G of the FET 108, typically at the M1level. In the illustrated example, the second passivation layer 206 hasbeen patterned and covered in whole or in part by a top-side layer 304of conductive material (commonly aluminum). The top-side layer 304 maybe used, for example, to distribute high current power around an IC chipand for signal connections.

The thicker interconnect levels (e.g., M4 and M5) are generally lower inelectrical resistance than the thinner interconnect levels (e.g.,M1-M3), and are commonly used to convey power around an IC. Of note, inthe illustrated example, the top layer interconnect level M5 is closerto the handle wafer 204 than is the M1 interconnect level. In contrast,in a conventional, non-SLT configuration, such as the type shown in FIG.1, the M1 interconnect level is closer to the substrate 102 than is theM5 interconnect level.

As is taught in U.S. patent application Ser. No. 15/920,321, thetop-side layer 304 also may be used to mitigate or eliminate theproblems caused by the secondary parasitic back-channel FET ofconventional FET IC structures. More particularly, embodiments of thatinvention enable full control of the secondary parasitic back-channelFET of semiconductor-on-insulator IC primary FETs by fabricating suchICs using a process which allows access to the backside of the FET, suchas an SLT process (collectively, a “back-side access process”).Thereafter, as shown in FIG. 3, a conductive aligned supplemental (CAS)gate structure 306 is fabricated as part of the fabrication of thetop-side layer 304 (the illustrated CAS gate structure 306 is shown indashed outline to indicate that it is an optional element for aparticular FET). The CAS gate structure 306 is formed relative to theBOX layer 104 and juxtaposed to a primary FET 108 such that a controlvoltage applied to the CAS gate structure 306 can regulate theelectrical characteristics of the regions of the primary FET 108adjacent the BOX layer 104. Such a FET may also be referred to as a“CAS-gated FET”. As should be apparent, one IC may have a mixture ofconventional FETs and CAS-gated FETs (including all of, or none of,either type).

While “flipped” SOI IC structures of the type shown in FIG. 3 (with orwithout CAS-gated FETs) have a number of advantages, one disadvantage isthe difficulty of forming capacitors without inducing unwanted parasiticcouplings to the handle wafer 204. Accordingly, with “flipped” SOI ICstructures of the type shown in FIG. 3, capacitors often must becomponents external to an IC and connected through terminal pads or thelike. Accordingly, there is a need for FET IC structures that enableformation of integrated capacitors in a “flipped” SOI IC structure madeusing a back-side access process, such as an SLT process, and whicheliminate or mitigate unwanted parasitic couplings to the handle wafer204. The present invention addresses this need and more.

SUMMARY

The present invention encompasses FET IC structures that enableformation of integrated capacitors in a “flipped” SOI IC structure madeusing a back-side access process, such as a “single layer transfer”(SLT) process, and which eliminate or mitigate unwanted parasiticcouplings to a handle wafer.

Some embodiments take advantage of the realization that back-side (or apost-SLT “new top”) access can be made to one or more interconnectlayers formed close to the active layer of an IC to create integratedcapacitor structures. For example, a conductive interconnect layer maybe patterned, pre-SLT, to form an isolated first capacitor plate, and apost-SLT top-side layer of conductive material may be patterned to forma second capacitor plate that is essentially parallel to the firstcapacitor plate and sufficiently close to provide a useful amount ofcapacitive coupling. Various ways of coupling the resulting capacitorstructure include only external connections, or only internalconnections, or both internal and external connections.

Other embodiments take advantage of the realization that back-sideaccess can be made to the active layer of an IC through one or moreinterconnect layers formed close to the active layer to createintegrated capacitor structures. For example, pre-SLT, a conductiveregion of the active layer may be patterned to form an isolated firstcapacitor plate, with one or more interconnect layers being fabricatedin position to form an electrical contact to the first capacitor plate.A post-SLT top-side layer of conductive material may be patterned toform a second capacitor plate that is essentially parallel to the firstcapacitor plate and sufficiently close to provide a useful amount ofcapacitive coupling. Various ways of coupling the resulting capacitorstructure include only external connections, or only internalconnections, or both internal and external connections.

The details of one or more embodiments of the invention are set forth inthe accompanying drawings and the description below. Other features,objects, and advantages of the invention will be apparent from thedescription and drawings, and from the claims.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a stylized cross-sectional view of a typical prior art SOI ICstructure for a single metal-oxide-semiconductor (MOS) field effecttransistor (FET), or MOSFET.

FIG. 2 is a stylized cross-sectional view of a typical prior art SOI ICstructure for a single FET, fabricated using an SLT process.

FIG. 3 is a stylized cross-sectional view of a SOI IC structure for asingle FET made using a back-side access process as taught in co-pendingU.S. patent application Ser. No. 15/920,321, referenced above.

FIG. 4A is a stylized cross-sectional view of a SOI IC structure for asingle FET made using a back-side access process and including a firstintegrated capacitor structure in accordance with the present invention.

FIG. 4B is a stylized cross-sectional view of a SOI IC structure for asingle FET made using a back-side access process and including a secondintegrated capacitor structure in accordance with the present invention.

FIG. 4C is a stylized cross-sectional view of a SOI IC structure for asingle FET made using a back-side access process and including a thirdintegrated capacitor structure in accordance with the present invention.

FIG. 4D is a stylized cross-sectional view of a SOI IC structure for asingle FET made using a back-side access process and including a fourthintegrated capacitor structure in accordance with the present invention.

FIG. 5 is a stylized cross-sectional view of a SOI IC structure for asingle FET made using a back-side access process and including a fifthintegrated capacitor structure in accordance with the present invention.

FIG. 6 is a process flow chart showing a first method of fabricating anintegrated circuit structure with integrated capacitors.

FIG. 7 is a process flow chart showing a second method of fabricating anintegrated circuit structure with integrated capacitors.

Like reference numbers and designations in the various drawings indicatelike elements.

DETAILED DESCRIPTION

The present invention encompasses FET IC structures that enableformation of integrated capacitors in a “flipped” SOI IC structure madeusing a back-side access process, such as a “single layer transfer”(SLT) process, and which eliminate or mitigate unwanted parasiticcouplings to a handle wafer.

IC Capacitors

Capacitors are widely used in alternating current electronic equipment,particularly in radio frequency (RF) equipment. In an IC, a capacitormay be formed by fabricating two conductive regions or elements (e.g.,polysilicon, doped silicon, or metal) in spaced relationship. A commonconstruction is to fabricate at least two parallel planes or layers(generally called “plates” regardless of specific geometry) ofconductive material in substantially aligned and spaced-apartrelationship, and couple at least a first terminal T1 to a first plate,and at least a second terminal T2 to a second plate. The plates areseparated by a dielectric, such as silicon oxide (SiO₂). The plates areformed in close enough proximity so as to be sufficiently capacitivelycoupled to be useful in circuits, particularly RF circuits. As is known,other configurations may be used to form an IC capacitor.

In conventional ICs of the type shown in FIG. 1, capacitors aretypically formed in interconnect levels (e.g., M5, M4) that are far awayfrom the substrate 102, which is generally made of silicon, to mitigatecapacitive coupling to the substrate 102, which would create unwantedparasitic capacitance. However, as should be apparent from FIG. 3, in a“flipped” or inverted SOI IC structure made using a back-side accessprocess, such as an SLT process, those same interconnect levels (e.g.,M5, M4) are in close proximity to the handle wafer 204. When the handlewafer 204 is made of silicon, such close proximity undesirably increasesunwanted parasitic capacitive coupling between capacitors formed in theclosest interconnect levels and the handle wafer 204.

While handle wafers made of non-conducting material (e.g., glass,quartz, diamond) would not exhibit capacitive coupling with capacitorsformed in proximate interconnect levels, such handle wafers arecurrently quite expensive compared to conventional silicon wafers(currently, a factor of 10-12 difference). Further, some IC fabricationfoundries are not set up to handle such less conventional materials.Accordingly, it is useful to use conventional silicon wafers for handlewafers, particularly inexpensive low resistivity silicon wafers.

First Example Integrated Capacitor Architecture

FIG. 4A is a stylized cross-sectional view of a SOI IC structure 400 fora single FET made using a back-side access process and including a firstintegrated capacitor structure in accordance with the present invention.Essentially, the illustrated embodiment takes advantage of therealization that back-side (or “new top”) access can be made to one ormore interconnect layers formed close to the active layer 106 of an ICto create integrated capacitor structures.

The example IC structure shown in FIG. 4A is similar to the IC structureof FIG. 3. However, in the example illustrated in FIG. 4A, before waferseparation and bonding to the handle wafer 204 (e.g., pre-SLT), the M1interconnect layer has been patterned using conventional techniques toform an isolated first capacitor plate 402 that is spaced apart from theactive layer 106 by intervening dielectric material (e.g., oxide).

After applying a back-side access process, such as an SLT process, a via404 of conductive material is formed through the second passivationlayer 206, the BOX layer 104, and the active layer 106 to create anelectrical contact to the first capacitor plate 402 (noting that theactive layer 106 generally would be initially patterned to provide anisolated region in which the via 404 can be formed after waferseparation, so as to be electrically isolated from other components andregions within the active layer 106). For example, the via 404 may bemade of copper and formed by masking and etching, in known fashion. Atop-side layer 304 of conductive material (commonly aluminum) is appliedand patterned to form an electrical connection 406 to the via 404.

The top-side layer 304 of conductive material is similarly patterned toform a second capacitor plate 408 that is spaced from the firstcapacitor plate 402 but sufficiently close to provide a useful amount ofcapacitive coupling. In the illustrated embodiment, the final capacitorstructure is encircled by a dashed oval 410. The separation between thefirst capacitor plate 402 and the second capacitor plate 408 is about1.2 μm in this example, with the BOX layer 104 itself providing about0.2 μm of dielectric separation (noting that vertical dimensions in thefigures are not to scale).

As should be appreciated, formation of the electrical connection 406 andof the second capacitor plate 408 is concurrent, simply by appropriatelypatterning the top-side layer 304, such as by masking and etching inknown fashion.

It the example IC illustrated in FIG. 4A, the electrical connection 406is electrically coupled to a conductive terminal pad, Pad1, and thesecond capacitor plate 408 is electrically coupled to a similarconductive terminal pad, Pad2. The terminal pads may be formed duringthe patterning of the top-side layer 304 and of the same conductivematerial (e.g., aluminum), but thicker to reduce resistance, or may beformed of another conductive material (e.g., gold) in a separate step.

FIG. 4B is a stylized cross-sectional view of a SOI IC structure 420 fora single FET made using a back-side access process and including asecond integrated capacitor structure in accordance with the presentinvention. The example IC structure shown in FIG. 4B is similar to theIC structure of FIG. 4A, with the exception that the first capacitorplate 402 is not coupled to an external electrical connection 406, butrather is internally coupled to another interconnect layer (thus, Pad1is not part of the capacitor circuit, but may be re-purposed for otheruses). More specifically, in the illustrated example, the firstcapacitor plate 402 is coupled through a via 310 a to a region 412 ofthe M2 interconnect layer. The resulting capacitor structure (encircledby the dashed oval 410) thus can be coupled between internal ICcircuitry and external circuitry (e.g., an RF signal source). Such acapacitor structure may be used, for example, as a DC filteringcapacitor.

FIG. 4C is a stylized cross-sectional view of a SOI IC structure 440 fora single FET made using a back-side access process and including a thirdintegrated capacitor structure in accordance with the present invention.The example IC structure shown in FIG. 4C is similar to the IC structureof FIG. 4B, with the exception that the second capacitor plate 408 isnot coupled to an external electrical connection (e.g., Pad2 in FIG.4B), but rather is internally coupled to another interconnect layer(again, Pad1 is not part of the capacitor circuit, but may bere-purposed for other uses). More specifically, in the illustratedexample, the second capacitor plate 408 is coupled through a via 414 toanother region of the M1 interconnect layer. The resulting capacitorstructure (encircled by the dashed oval 410) thus can be directlycoupled solely between internal IC circuit elements.

FIG. 4D is a stylized cross-sectional view of a SOI IC structure 460 fora single FET made using a back-side access process and including afourth integrated capacitor structure in accordance with the presentinvention. The example IC structure shown in FIG. 4D is similar to theIC structure of FIG. 4A (i.e., with the first capacitor plate 402connected to Pad1), with the exception that the second capacitor plate408 is not coupled to an external electrical connection (e.g., Pad2 inFIG. 4A), but rather is internally coupled to another interconnectlayer. More specifically, in the illustrated example, the secondcapacitor plate 408 is coupled through a via 414 to another region ofthe M1 interconnect layer. The resulting capacitor structure (encircledby the dashed oval 410) thus can be coupled between internal ICcircuitry and external circuitry (e.g., an RF signal source). Such acapacitor structure may be used, for example, as a DC filteringcapacitor.

As should be appreciated, a particular IC may have multiple instances ofany or all of the capacitor structures shown in FIGS. 4A-4D. Electricalconnections to such capacitor structures can be made in a variety ofways, including the illustrated connection ways, and in any feasiblecombination of such ways. Thus, some capacitor structures may have onlyexternal connections, some capacitor structures may have only internalconnections, and yet other capacitor structures may have both internaland external connections. Accordingly, capacitor structures inaccordance with the present invention may be coupled to other componentsin an assortment of ways to accommodate the design and layout of aparticular IC.

Second Example Integrated Capacitor Architecture

The IC structures shown in FIGS. 4A-4D show configurations in which thefirst capacitor plate 402 is an isolated portion of an interconnectlayer, such as the M1 interconnect layer. However, an integratedcapacitor structure in accordance with the present invention may beformed using an isolated portion of the active layer 106 as onecapacitor plate. Essentially, such embodiments take advantage of therealization that back-side (or “new top”) access can be made to theactive layer of an IC through one or more interconnect layers formedclose to the active layer 106 to create integrated capacitor structures.

An advantage of using an isolated portion of the active layer 106 as acapacitor plate is that the intervening BOX layer 104 and secondpassivation layer 206 are very thin and very uniform in thickness andquality, which allows fabrication of high quality capacitors. The BOXlayer 104 and second passivation layer 206 are both generally of thesame material, SiO₂, which has a dielectric strength of about 8×10⁶V/cm. In some fabrication processes, it is possible to make a very thinBOX layer 104 (e.g., about 50 nm) and second passivation layer 206(e.g., about 100 nm). Thinner layers provide a better capacitivedensity. Another way to improve capacitive density is to form the secondpassivation layer 206 from a high dielectric constant material (such assilicon nitride or hafnium dioxide) on the BOX layer 104, preferably athin BOX layer 104.

As one example, FIG. 5 is a stylized cross-sectional view of a SOI ICstructure 500 for a single FET made using a back-side access process andincluding a fifth integrated capacitor structure in accordance with thepresent invention. In the illustrated example, an isolated firstcapacitor plate 502 is formed by patterning the active layer 106,typically during the fabrication of any active components, such as FETs108 of the type shown in FIG. 1. The isolated active layer 106 may bedoped with suitable dopants or converted to silicide to achieve adesired level of conductivity. Thereafter, a first via 504 may be formedin conventional manner to provide an electrical connection to a selectedportion of an interconnect layer, such as an isolated portion 506 of theM1 interconnect layer, which serves as a “buried” lateral connection.

Thereafter, the remainder of the superstructure 112 is formed, thesecond passivation layer 202 is applied, and a back-side access process,such as an SLT process, is applied to “flip” the IC structure and createa “new top” (i.e., the backside of the IC, shown with an applied secondpassivation layer 206).

With the backside of the IC being accessible, a second via 508 may beformed in electrical contact with the buried isolated portion 506 of theselected interconnect layer, such as in the manner described above withrespect to FIG. 4A. A top-side layer 304 of conductive material isapplied and patterned to form an electrical connection 406 to the via508. Accordingly, the first capacitor plate 502 is coupled through thefirst via 504, the laterally-extending isolated portion 506 of the M1interconnect layer, the second via 508, to the electrical connection406; in this example, the electrical connection 406 is in turn coupledto Pad1.

The top-side layer 304 of conductive material is similarly patterned toform a second capacitor plate 408 that is spaced from the firstcapacitor plate 502 but sufficiently close to provide a useful amount ofcapacitive coupling. In the illustrated embodiment, the final capacitorstructure is encircled by a dashed oval 510. As should be appreciated,formation of the electrical connection 406 and of the second capacitorplate 408 is concurrent, simply by appropriately patterning the top-sidelayer 304, such as by masking and etching in known fashion.

It the example IC illustrated in FIG. 5, the electrical connection 406is electrically coupled to a conductive terminal pad, Pad1, and thesecond capacitor plate 408 is electrically coupled to a similarconductive terminal pad, Pad2. However, the alternative connectionpathways shown in FIGS. 4B-4D may also be applied to an IC having one ormore capacitor structures of the type shown in FIG. 5. Further, aparticular IC may have multiple instances of any or all of the capacitorstructures shown in FIGS. 4A-4D and FIG. 5. Electrical connections tosuch capacitor structures can be made in a variety of ways, includingthe illustrated connection ways, and in any feasible combination of suchways. Thus, some capacitor structures may have only externalconnections, some capacitor structures may have only internalconnections, and yet other capacitor structures may have both internaland external connections. Accordingly, capacitor structures inaccordance with the present invention may be coupled to other componentsin an assortment of ways to accommodate the design and layout of aparticular IC.

The second passivation layer 206 and the BOX layer 104 provide about 0.2μm of dielectric separation between the first capacitor plate 502 andthe second capacitor plate 408 (again noting that vertical dimensions inthe figures are not to scale). In comparison, for example ICs made usingthe same design rules, the dielectric separation of capacitivestructures in accordance with the examples of FIGS. 4A-4D is about 1.2μm, a factor of 6 difference. Accordingly, the capacitance per unit areaof the capacitive structure of FIG. 5 is significantly greater thancapacitance per unit area of the capacitive structures of FIGS. 4A-4D,which allows fabrication of smaller (less planar area) capacitors for aspecified capacitance value using the capacitive structure of FIG. 5.

Benefits and Variations

The IC structures shown in FIGS. 4A-4D and FIG. 5 show integratedcapacitor structures in which the first capacitor plate 402 is anisolated portion of the M1 interconnect layer, or in which a portion ofthe M1 interconnect layer is used to couple to the first capacitor plate502. In other embodiments, one or more integrated capacitor structuresmay use a different interconnect layer, such as the M2 interconnectlayer, to form one or more first capacitor plates. Of course, in aparticular IC, a mix of different interconnect layers may be used fordifferent integrated capacitor structures.

In some embodiments, a single first capacitor plate may be capacitivelycoupled to two or more second capacitor plates. In some embodiments, asingle second capacitor plate may be capacitively coupled to two or morefirst capacitor plates.

A benefit of IC structures of the type shown in FIGS. 4A-4D and FIG. 5is that the integrated capacitor structures are spaced away from thehandle wafer 204, thus reducing parasitic capacitive coupling.

Another benefit of IC structures of the type shown in FIGS. 4A-4D andFIG. 5 is that the handle wafer 204 may be an inexpensive silicon wafer,and especially an inexpensive low resistivity silicon wafer (e.g.,silicon wafers having a resistivity of about 14-200 ohms).

While the particular IC examples shown in FIGS. 4A-4D and FIG. 5 do notshow a FET or CAS-gated FET, the integrated capacitor structuresdescribed above are compatible with FETs and/or CAS-gated FETs (astaught in co-pending U.S. patent application Ser. No. 15/920,321,entitled “Semiconductor-on-Insulator Transistor with Improved BreakdownCharacteristics” and referenced above).

Embodiments of the present invention may include integrated circuitinductor structures of the type described in co-pending U.S. PatentApplication entitled “High-Q Integrated Circuit Inductor Structure andMethods”, referenced above.

Uses

Circuits and devices made using IC structures in accordance with thepresent invention may be used alone or in combination with othercomponents, circuits, and devices. Integrated circuit embodiments of thepresent invention may be encased in IC packages and/or or modules forease of handling, manufacture, and/or improved performance.

Circuits and devices made using IC structures in accordance with thepresent invention are useful in a wide variety of larger radio frequency(RF) circuits for performing a range of functions. Such functions areuseful in a variety of applications, such as radar systems (includingphased array and automotive radar systems), radio systems, and testequipment. Such circuits may be useful in systems operating over some orall of the RF range (e.g., from around 20 kHz to about 300 GHz).

Radio system usage includes cellular radios systems (including basestations, relay stations, and hand-held transceivers) that use suchtechnology standards as various types of orthogonal frequency-divisionmultiplexing (“ODFM”), various types of quadrature amplitude modulation(“QAM”), Code Division Multiple Access (“CDMA”), Wide Band Code DivisionMultiple Access (“WCDMA”), Global System for Mobile Communications(“GSM”), Enhanced Data Rates for GSM Evolution (EDGE), Long TermEvolution (“LTE”), 5G New Radio (“5G NR”), as well as other radiocommunication standards and protocols.

In particular, the present invention is useful in portablebattery-operated devices, such as cellular telephones, that wouldbenefit from RF circuitry having SLT ICs with integrated capacitors.

Methods

Another aspect of the invention includes methods for fabricating SLT ICswith integrated capacitors. For example, FIG. 6 is a process flow chart600 showing a first method of fabricating an integrated circuitstructure with integrated capacitors, including: fabricating a deviceregion on a substrate, the device region having (i) a first surface and(ii) an opposing second surface physically coupled to the substrate[Block 602]; fabricating at least one first capacitor plate from a firstconductive interconnect layer formed spaced apart from the first surfaceof the device region [Block 604]; fabricating a first passivation layerspaced apart from the first conductive interconnect layer [Block 606];attaching an exposed surface of the first passivation layer to a handlewafer, thereby inverting the device region [Block 608]; removing thesubstrate from the inverted device region, thereby exposing the secondsurface of the device region [Block 610]; fabricating a secondpassivation layer on the exposed second surface of the inverted deviceregion [Block 612]; and fabricating at least one second capacitor platefrom a top-side layer of conductive material formed on the secondpassivation layer, wherein at least one first capacitor plate iscapacitively coupled to at least one second capacitor plate [Block 614].

Further aspects of the above method may include one or more of thefollowing: fabricating an electrical connection between the top-sidelayer of conductive material and at least one first capacitor plate;fabricating an electrical connection between at least one firstcapacitor plate and a second conductive interconnect layer; fabricatingan electrical connection between at least one second capacitor plate anda second conductive interconnect layer; at least one first capacitorplate being capacitively coupled to at least two second capacitorplates; at least one second capacitor plate being capacitively coupledto at least two first capacitor plates; fabricating at least one fieldeffect transistor as part of the integrated circuit structure;fabricating at least one field effect transistor having a conductivealigned supplemental gate as part of the integrated circuit structure;fabricating the integrated circuit structure using asilicon-on-insulator process; the handle wafer being principallysilicon; and/or the handle wafer including a low resistivity siliconwafer.

As another example, FIG. 7 is a process flow chart 700 showing a secondmethod of fabricating an integrated circuit structure with integratedcapacitors, including: fabricating a device region on a substrate, thedevice region having (i) a first surface and (ii) an opposing secondsurface physically coupled to the substrate [Block 702]; fabricating atleast one first capacitor plate from an active layer of the deviceregion [Block 704]; fabricating a first passivation layer spaced apartfrom the device region [Block 706]; attaching an exposed surface of thefirst passivation layer to a handle wafer, thereby inverting the deviceregion [Block 708]; removing the substrate from the inverted deviceregion, thereby exposing the second surface of the device region [Block710]; fabricating a second passivation layer on the exposed secondsurface of the inverted device region [Block 712]; and fabricating atleast one second capacitor plate from a top-side layer of conductivematerial formed on the second passivation layer, wherein at least onefirst capacitor plate is capacitively coupled to at least one secondcapacitor plate [Block 714].

Further aspects of the above method may include one or more of thefollowing: fabricating at least one lateral electrical connection from afirst conductive interconnect layer before inverting the device region,and fabricating a conductive via between at least one lateral electricalconnection and at least one first capacitor plate; fabricating anelectrical connection between the top-side layer of conductive materialand at least one lateral electrical connection; fabricating anelectrical connection between at least one first capacitor plate and atleast one second conductive interconnect layer; including fabricating anelectrical connection between at least one second capacitor plate and atleast one second conductive interconnect layer; at least one firstcapacitor plate being capacitively coupled to at least two secondcapacitor plates; at least one second capacitor plate being capacitivelycoupled to at least two first capacitor plates; fabricating at least onefield effect transistor as part of the integrated circuit structure;fabricating at least one field effect transistor having a conductivealigned supplemental gate as part of the integrated circuit structure;fabricating the integrated circuit structure using asilicon-on-insulator process; wherein the handle wafer being principallysilicon; and/or the handle wafer including a low resistivity siliconwafer.

Fabrication Technologies & Options

The term “MOSFET”, as used in this disclosure, means any field effecttransistor (FET) with an insulated gate and comprising a metal ormetal-like, insulator, and semiconductor structure. The terms “metal” or“metal-like” include at least one electrically conductive material (suchas aluminum, copper, or other metal, or highly doped polysilicon,graphene, or other electrical conductor), “insulator” includes at leastone insulating material (such as silicon oxide or other dielectricmaterial), and “semiconductor” includes at least one semiconductormaterial.

As should be readily apparent to one of ordinary skill in the art,various embodiments of the invention can be implemented to meet a widevariety of specifications. Unless otherwise noted above, selection ofsuitable component values is a matter of design choice and variousembodiments of the invention may be implemented in any suitableintegrated circuit (IC) technology (including but not limited to MOSFETstructures), or in hybrid or discrete circuit forms. Integrated circuitembodiments may be fabricated using any suitable substrates andprocesses, including but not limited to standard bulk silicon,silicon-on-insulator (SOI), and silicon-on-sapphire (SOS). Unlessotherwise noted above, the invention may be implemented in othertransistor technologies such as bipolar, GaAs HBT, GaN HEMT, GaAs pHEMT,and MESFET technologies. However, the inventive concepts described aboveare particularly useful with an SOI-based fabrication process (includingSOS), and with fabrication processes having similar characteristics.Fabrication in CMOS on SOI or SOS processes enables circuits with lowpower consumption, the ability to withstand high power signals duringoperation due to FET stacking, good linearity, and high frequencyoperation (i.e., radio frequencies up to and exceeding 50 GHz).Monolithic IC implementation is particularly useful since parasiticcapacitances generally can be kept low (or at a minimum, kept uniformacross all units, permitting them to be compensated) by careful design.

Voltage levels may be adjusted, and/or voltage and/or logic signalpolarities reversed, depending on a particular specification and/orimplementing technology (e.g., NMOS, PMOS, or CMOS, and enhancement modeor depletion mode transistor devices). Component voltage, current, andpower handling capabilities may be adapted as needed, for example, byadjusting device sizes, serially “stacking” components (particularlyFETs) to withstand greater voltages, and/or using multiple components inparallel to handle greater currents. Additional circuit components maybe added to enhance the capabilities of the disclosed circuits and/or toprovide additional functionality without significantly altering thefunctionality of the disclosed circuits.

Conclusion

A number of embodiments of the invention have been described. It is tobe understood that various modifications may be made without departingfrom the spirit and scope of the invention. For example, some of thesteps described above may be order independent, and thus can beperformed in an order different from that described. Further, some ofthe steps described above may be optional. Various activities describedwith respect to the methods identified above can be executed inrepetitive, serial, or parallel fashion.

It is to be understood that the foregoing description is intended toillustrate and not to limit the scope of the invention, which is definedby the scope of the following claims, and that other embodiments arewithin the scope of the claims. (Note that the parenthetical labels forclaim elements are for ease of referring to such elements, and do not inthemselves indicate a particular required ordering or enumeration ofelements; further, such labels may be reused in dependent claims asreferences to additional elements without being regarded as starting aconflicting labeling sequence).

1. An inverted integrated circuit structure attached to a handle waferand including: (a) a buried-oxide (BOX) insulator layer, an activelayer, and at least one conductive interconnect layer, the at least oneconductive interconnect layer being situated between the active layerand the handle wafer, and the active layer being situated between the atleast one conductive interconnect layer and the BOX insulator layer; (b)at least one first capacitor plate formed from a first conductiveinterconnect layer before application of a back-side access process; and(c) at least one second capacitor plate formed from a top-side layer ofconductive material after application of the back-side access process;wherein the BOX insulator is situated between the active layer and thetop-side layer of conductive material and wherein at least one firstcapacitor plate is capacitively coupled to at least one second capacitorplate.
 2. The invention of claim 1, further including an electricalconnection formed between the top-side layer of conductive material andthe first capacitor plate, and formed after application of the back-sideaccess process.
 3. The invention of claim 1, further including anelectrical connection formed between the first capacitor plate and asecond conductive interconnect layer, and formed before application ofthe back-side access process.
 4. The invention of claim 1, furtherincluding an electrical connection formed between the second capacitorplate and a second conductive interconnect layer, and formed afterapplication of the back-side access process.
 5. The invention of claim1, wherein at least one first capacitor plate is capacitively coupled toat least two second capacitor plates.
 6. The invention of claim 1,wherein at least one second capacitor plate is capacitively coupled toat least two first capacitor plates.
 7. The invention of claim 1,wherein the integrated circuit structure includes at least one fieldeffect transistor.
 8. The invention of claim 1, wherein the integratedcircuit structure includes at least one field effect transistor having aconductive aligned supplemental gate.
 9. The invention of claim 1,wherein the integrated circuit structure is fabricated using asilicon-on-insulator process. 10.-12. (canceled)
 13. An invertedintegrated circuit structure attached to a handle wafer and including:(a) a buried-oxide (BOX) insulator layer, an active layer, and at leastone conductive interconnect layer, the at least one conductiveinterconnect layer being situated between the active layer and thehandle wafer, and the active layer being situated between the at leastone conductive interconnect layer and the BOX insulator layer; (b) atleast one first capacitor plate formed from the active layer beforeapplication of a back-side access process; and (c) at least one secondcapacitor plate formed from a top-side layer of conductive materialafter application of the back-side access process; wherein the BOXinsulator is situated between the active layer and the top-side layer ofconductive material and wherein at least one first capacitor plate iscapacitively coupled to at least one second capacitor plate.
 14. Theinvention of claim 13, further including: (a) a conductive via connectedto the first capacitor plate; and (b) a lateral electrical connection inelectrical contact with the conductive via and formed from a firstconductive interconnect layer before application of a back-side accessprocess.
 15. The invention of claim 14, further including an electricalconnection formed between the top-side layer of conductive material andthe lateral electrical connection, and formed after application of theback-side access process.
 16. The invention of claim 13, furtherincluding an electrical connection formed between the first capacitorplate and a second conductive interconnect layer, and formed beforeapplication of the back-side access process.
 17. The invention of claim13, further including an electrical connection formed between the secondcapacitor plate and a second conductive interconnect layer, and formedafter application of the back-side access process.
 18. The invention ofclaim 13, wherein at least one first capacitor plate is capacitivelycoupled to at least two second capacitor plates.
 19. The invention ofclaim 13, wherein at least one second capacitor plate is capacitivelycoupled to at least two first capacitor plates.
 20. The invention ofclaim 13, wherein the integrated circuit structure includes at least onefield effect transistor.
 21. The invention of claim 13, wherein theintegrated circuit structure includes at least one field effecttransistor having a conductive aligned supplemental gate.
 22. Theinvention of claim 13, wherein the integrated circuit structure isfabricated using a silicon-on-insulator process. 23.-26. (canceled) 27.An integrated circuit structure including: (a) a handle wafer having atleast a first surface; (b) a first passivation layer having a firstsurface physically coupled to the first surface of the handle wafer, andhaving a second surface; (c) an inverted device region having a firstsurface formed spaced apart from the first passivation layer, and havinga second surface; (d) at least one first capacitor plate formed withinan active layer of the inverted device region; (e) a second passivationlayer having a first surface physically coupled to the second surface ofthe inverted device region, and having a second surface; and (f) atleast one second capacitor plate formed from a top-side layer ofconductive material formed on the second surface of the secondpassivation layer; wherein at least one first capacitor plate iscapacitively coupled to at least one second capacitor plate. 28.-50.(canceled)